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| Power Transistors 2SD2469, 2SD2469A Silicon NPN epitaxial planar type For power switching Complementary to 2SB1607 Unit: mm s Features q q q q 4.60.2 3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25C) Ratings 130 150 80 100 7 15 7 40 2 150 -55 to +150 Unit V 15.00.3 3.00.2 Parameter Collector to base voltage Collector to 2SD2469 2SD2469A 2SD2469 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 13.7-0.2 +0.5 s Absolute Maximum Ratings 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 emitter voltage 2SD2469A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V A A W C C 7 1:Base 2:Collector 3:Emitter TO-220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2469 2SD2469A (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A IC = 5A, IB = 0.25A IC = 5A, IB = 0.25A VCE = 10V, IC = 0.5A, f = 10MHz IC = 3A, IB1 = 0.3A, IB2 = - 0.3A, VCC = 50V 30 0.5 1.5 0.1 80 100 45 90 260 0.5 1.5 V V MHz s s s min typ max 10 50 Unit A A V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC -- Ta 50 10 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C 2SD2469, 2SD2469A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) -- IC (1) IC/IB=10 (2) IC/IB=20 TC=25C Collector power dissipation PC (W) Collector current IC (A) 40 (1) 8 IB=55mA 6 50mA 45mA 40mA 35mA 30mA 20mA 15mA 2 10mA 5mA 0 3 30 1 (2) (1) 0.3 20 4 0.1 10 (2) (3) (4) 0.03 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0.01 0.01 0.03 0.1 0.3 1 3 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 VBE(sat) -- IC 100 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=20 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C 25C Base to emitter saturation voltage VBE(sat) (V) IC/IB=20 30 10 3 1 TC=100C 0.3 0.1 -25C 0.03 0.01 0.01 0.03 25C 10 (1) IC/IB=10 (2) IC/IB=20 TC=25C 3 (1) (2) 1 0.3 0.1 0.03 0.1 0.3 1 3 10 0.01 0.1 0.3 1 3 10 30 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) hFE -- IC 10000 VCE=2V 10000 3000 1000 300 100 30 10 3 1 0.01 0.03 fT -- IC 10000 Cob -- VCB Collector output capacitance Cob (pF) VCE=10V f=10MHz TC=25C IE=0 f=1MHz TC=25C Forward current transfer ratio hFE 1000 300 Transition frequency fT (MHz) 3000 3000 1000 300 100 30 10 3 1 0.1 TC=100C 25C 100 -25C 30 10 3 1 0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) 2 Power Transistors ton, tstg, tf -- IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=-IB2) VCC=50V TC=25C 2SD2469, 2SD2469A Area of safe operation (ASO) 100 30 ICP Non repetitive pulse TC=25C Switching time ton,tstg,tf (s) Collector current IC (A) 10 3 1 0.3 0.1 0.03 0.01 0 1 2 3 4 10 IC 3 10ms DC 1 1ms 0.3 0.1 0.03 0.01 t=0.5ms tstg ton tf 5 6 7 8 1 3 10 30 100 2SD2469A 300 2SD2469 1000 Collector current IC (A) Collector to emitter voltage VCE (V) Rth(t) -- t 103 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink Thermal resistance Rth(t) (C/W) 102 (1) 10 (2) 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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